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TPC8005-H

Toshiba Semiconductor
Part Number TPC8005-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS) TPC8005−H High Speed and High E...
Datasheet PDF File TPC8005-H PDF File

TPC8005-H
TPC8005-H

Overview
TPC8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U−MOS) TPC8005−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package High speed switching : 60% speed up (compare with current type) Small gate charge : Qg = 20 nC (typ.
) : RDS (ON) = 13 mΩ (typ.
) Low drain−source ON resistance Unit: mm High forward transfer admittance : |Yfs| = 16 S (typ.
) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 1.
3~2.
5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 11 44 2.
4 1.
0 157 11 0.
24 150 −55 to 150 Unit V V V A W W JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power d...


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