DatasheetsPDF.com

TLE4216G

Siemens Semiconductor Group
Part Number TLE4216G
Manufacturer Siemens Semiconductor Group
Description Intelligent Sixfold Low-Side Switch
Published Apr 16, 2005
Detailed Description Intelligent Sixfold Low-Side Switch TLE 4216 G Bipolar IC Features q q q q q q q q q Double low-side switch, 2 x 0.5...
Datasheet PDF File TLE4216G PDF File

TLE4216G
TLE4216G

Overview
Intelligent Sixfold Low-Side Switch TLE 4216 G Bipolar IC Features q q q q q q q q q Double low-side switch, 2 x 0.
5 A Quad low-side switch, 4 x 50 mA Power limitation Open-collector outputs Overtemperature shutdown Status monitoring Shorted-load protection Integrated clamp Z-Diodes Temperature range – 40 to 110 °C P-DSO-24-3 Type TLE 4216 G Ordering Code Q67000-A9108 Package P-DSO-24-3 (SMD) TLE 4216 G is an integrated, sixfold low-side power switch with power limiting of the 0.
5 A outputs, shorted load protection of the 50 mA switches and Z-diodes on all switches from output to ground.
TLE 4216 G is particularly suitable for automotive and industrial applications.
Semiconductor Group 1 08.
96 TLE 4216 G Pin Configuration (top view) TLE 4216 G Semiconductor Group 2 TLE 4216 G Pin Definitions and Functions TLE 4216 G Pin No.
1, 2, 3, 4 5, 6, 7, 8 9, 10 11 12 I1, I2, I3, I4 GND I5, I6 QST Inputs of 50-mA switches 1, 2, 3, 4 Ground, cooling Inputs of 0.
5 A switches 5, 6 Status analog output Reference voltage; a higher reference voltage than the internal one can be applied from the exterior as a voltage reference for the status output (A/D converter).
Supply voltage Preferred state (low = preferred state of all outputs regardless of inputs) Outputs 6, 5 (0.
5 A), open collector Ground, cooling Outputs 4, 3, 2, 1 (50 mA), open collector Symbol Function VREF 13 14 15, 16 17, 18, 19, 20 21, 22, 23, 24 VS PREFST Q6, Q5 GND Q4, Q3, Q2, Q1 Semiconductor Group 3 TLE 4216 G Block Diagram Semiconductor Group 4 TLE 4216 G Circuit Description Input Circuits The control inputs and the preferred-state input consist of TTL-compatible Schmitt triggers with hysteresis.
Driven by these stages the buffer amplifiers convert the logic signal necessary for driving the NPN power transistors.
Switching Stages The output stages consist of NPN power transistors with open collectors.
Each stage has its own protective circuit for limiting power dissipation and shorted-l...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)