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THDT6511DRL

STMicroelectronics
Part Number THDT6511DRL
Manufacturer STMicroelectronics
Description TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Published Apr 16, 2005
Detailed Description THDT6511D Application Specific Discretes A.S.D.™ FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = ...
Datasheet PDF File THDT6511DRL PDF File

THDT6511DRL
THDT6511DRL

Overview
THDT6511D Application Specific Discretes A.
S.
D.
™ FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min.
BREAKDOWN VOLTAGE : 65 V min.
LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage.
Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors.
A particular attention has beengiven to the internal wire bonding.
The ”4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages.
COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700µs 5/310µs 10/700µs 5/310µs 1.
2/50µs 1/20µs 0.
5/700µs 0.
2/310µs 2/10µs 2/10µs 2/10µs 2/10µs 10/1000µs 10/1000µs 1kV 38A 2kV 50A 1.
5kV 40A 1kV 38A 2.
5kV 125A (*) 2.
5kV 125A (*) 1kV 40A (*) SCHEMATIC DIAGRAM TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION PRELIMINARY DATASHEET TIP 1 GND 2 GND 3 RING 4 8 TIP 7 GND 6 GND 5 RING (*) with series resistors or PTC.
February 1998 - Ed: 2 1/6 THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol IPP Peak pulse current Parameter (see note 1) 10/1000µs 5/310µs 2/10µs t = 300 ms t=1s t=5s Value 40 50 125 10 3.
5 1 1 - 55 to + 150 150 260 % I PP Unit A ITSM Non repetitive surge peak on-state current F = 50 Hz F = 50 Hz, 60 x 1 s, 2 mn between pulse Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s tp=1000µs tp=310µs tp=10µs A ITSM Tstg Tj TL A °C °C Note 1 : Pulse waveform : 10/1000µs tr =10µs 5/310µs tr =5µs 2/10µs tr =2µs 100 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VBR VBO IH VF VFP IBO IPP C αT Parameter...


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