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TISP4200M3BJ

Power Innovations Limited
Part Number TISP4200M3BJ
Manufacturer Power Innovations Limited
Description BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Published Apr 16, 2005
Detailed Description TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR O...
Datasheet PDF File TISP4200M3BJ PDF File

TISP4200M3BJ
TISP4200M3BJ


Overview
TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK NOVEMBER 1997 - REVISED MARCH 1999 TELECOMMUNICATION SYSTEM 50 A 10/1000 OVERVOLTAGE PROTECTORS q q 4 kV 10/700, 100 A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘4070 ‘4080 ‘4095 ‘4125 ‘4145 ‘4165 ‘4180 ‘4200 ‘4240 ‘4265 ‘4300 ‘4350 ‘4400 VDRM V 58 65 75 100 120 135 145 155 180 200 230 275 300 V(BO) V 70 80 95 125 145 165 180 200 240 265 300 350 400 SMBJ PACKAGE (TOP VIEW) R(B) 1 2 T(A) MDXXBG device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B q Rated for International Surge Wave Shapes WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 300 220 120 100 75 50 q q Low Differential Capacitance .
.
.
43 pF max.
UL Recognized, E132482 description These devices are designed to limit overvoltages on the telephone line.
Overvoltages are normally caused by a.
c.
power system or lightning flash disturbances which are induced or conducted on to the telephone line.
A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.
g.
between the Ring and Tip wires for telephones and modems).
Combinations of devices can be used for multi-point protection (e.
g.
3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor.
Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state.
This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device.
The high cr...


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