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SMJ44400

Part Number	SMJ44400
Manufacturer	ETC
Description	1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY
Published	Apr 16, 2005
Detailed Description	DRAM Austin Semiconductor, Inc. 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962...
Datasheet	SMJ44400 PDF File

Overview

DRAM Austin Semiconductor, Inc.
1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 SMJ44400 PIN ASSIGNMENT (Top View) 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) DQ1 DQ2 W\ RAS\ A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 Vss DQ4 DQ3 CAS\ OE\ A8 A7 A6 A5 A4 FEATURES • Organized 1,048,576 x 4 • Single +5V ±10% power supply • Enhanced Page-Mode operation for faster memory access P Higher data bandwidth than conventional page-mode parts P Random Single-Bit Access within a row with a column address • CAS\-Before-RAS\ (CBR) Refresh • Long Refresh period: 1024-cycle Refresh in 16ms (Max) • 3-State unlatched Output • Low Power Dissipation • All Inputs/Outputs and Clocks are TTL Compatible • Processing to MIL-STD-883, Class B available Pin Name A0 - A9 CAS\ DQ1 - DQ4 OE\ RAS\ W\ Vcc Vss Function Address Inputs Column-Address Strobe Data Inputs/Outputs Output Enable Row-Address Strobe Write Enable 5V Supp...

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