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SML80H12

Seme LAB
Part Number SML80H12
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 16, 2005
Detailed Description SML80H12 TO–258 Package Outline. Dimensions in mm (inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (...
Datasheet PDF File SML80H12 PDF File

SML80H12
SML80H12

Overview
SML80H12 TO–258 Package Outline.
Dimensions in mm (inches) 17.
65 (0.
695) 17.
39 (0.
685) 6.
86 (0.
270) 6.
09 (0.
240) 1.
14 (0.
707) 0.
88 (0.
035) 17.
96 (0.
707) 17.
70 (0.
697) 13.
84 (0.
545) 13.
58 (0.
535) 1 2 3 4.
19 (0.
165) 3.
94 (0.
155) Dia.
21.
21 (0.
835) 20.
70 (0.
815) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 800V 11.
5A ID(cont) RDS(on) 0.
670Ω 3.
56 (0.
140) BSC 19.
05 (0.
750) 12.
70 (0.
500) 5.
08 (0.
200) BSC 1.
65 (0.
065) 1.
39 (0.
055) Typ.
Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • Faster Switching • Lower Leakage • TO–258 Hermetic Package D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET ef...


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