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SM16GZ47

Toshiba Semiconductor
Part Number SM16GZ47
Manufacturer Toshiba Semiconductor
Description BI?DIRECTIONAL TRIODE THYRISTOR
Published Apr 16, 2005
Detailed Description SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47,SM16JZ47,SM1...
Datasheet PDF File SM16GZ47 PDF File

SM16GZ47
SM16GZ47


Overview
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.
M.
S On−State Current l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC : IT (RMS) = 16A MAXIMUM RATINGS CHARACTERISTIC SM16GZ47 SM16GZ47A SM16JZ47 SM16JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 UNIT Repetitive Peak Off−State Voltage V R.
M.
S On−State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.
) 2 16 150 (50Hz) 165 (60Hz) 112.
5 50 5 0.
5 10 2 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.
7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.
5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.
0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16GZ47 SM16JZ47 Gate Trigger Current SM16GZ47A SM16JZ47A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage SM16GZ47 SM16JZ47 SM16GZ47A SM16JZ47A SM16GZ47 SM16JZ47 SM16GZ47A SM16JZ47A VTM VGD IH Rth (j−c) ITM = 25A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (+) T2 (+) , Gate (+) T2 (+) ,...


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