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SM16JZ47

Toshiba Semiconductor
Part Number SM16JZ47
Manufacturer Toshiba Semiconductor
Description BI?DIRECTIONAL TRIODE THYRISTOR
Published Apr 16, 2005
Detailed Description SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47,SM16JZ47,SM1...
Datasheet PDF File SM16JZ47 PDF File

SM16JZ47
SM16JZ47

Overview
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.
M.
S On−State Current l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC : IT (RMS) = 16A MAXIMUM RATINGS CHARACTERISTIC SM16GZ47 SM16GZ47A SM16JZ47 SM16JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg VISOL 2 UNIT Repetitive Peak Off−State Voltage V R.
M.
S On−State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.
) 2 16 150 (50Hz) 165 (60Hz) 112.
5 50 5 0.
5 10 2 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2...


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