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RX1214B130Y

NXP
Part Number RX1214B130Y
Manufacturer NXP
Description NPN microwave power transistors
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supers...
Datasheet PDF File RX1214B130Y PDF File

RX1214B130Y
RX1214B130Y

Overview
DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits.
APPLICATIONS Common-base class C broadband pulsed power amplifiers for radar applications in the 1.
2 to 1.
4 GHz band.
Also suitable for long pulse, heavy duty operation within this band.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ce...


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