DatasheetsPDF.com

RX1214B170W

NXP
Part Number RX1214B170W
Manufacturer NXP
Description Microwave power transistor
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of Dece...
Datasheet PDF File RX1214B170W PDF File

RX1214B170W
RX1214B170W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits.
APPLICATIONS Intended for use in common-base class C broadband pulsed power amplifiers for radar applications in the 1.
2 to 1.
4 GHz band.
Also suitable for long pulse, heavy duty operation within this band.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal cera...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)