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RM20TPM-M

Mitsubishi Electric Semiconductor

MEDIUM POWER GENERAL USE INSULATED TYPE

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RM20TPM-M

Mitsubishi Electric Semiconductor


Octopart Stock #: O-344694

Findchips Stock #: 344694-F

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P ge. ion. icat to chan ecif l sp ubject a in af es not its ar lim is is : Th metric e ic Not e para Som IM REL RY INA MITSUBISHI DIODE MODULES RM20TPM-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE RM20TPM-M,-H DC output current .. 40A Repetitive peak reverse voltage ... 400/800V • 3 phase bridge • Insulated Type • I
More View O • VRRM APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 13.5 15 15 8 2-φ4.5 14.5 28 57 70 10 5-M4 LABEL 6 22 18 20 40 Feb.1999 MITSUBISHI DIODE MODULES RM20TPM-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage Voltage class M 400 500 110 H 800 900 220 Unit V V V Symbol IO IFSM I2t f Tj Tstg Viso Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M4 Conditions Three-phase full wave rectifying circuit, TC=125°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 40 400 4.2 × 103 1000 –40~+150 –40~+125 2500 0.98~1.47 10~15 0.98~1.47 10~15 100 Unit A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=40A, instantaneous meas. Junction to case Case to fin, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 10 1.2 0.33 0.09 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM20TPM-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 3 2 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 0.6 Tj=25°C ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 500 400 300 200 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 70 60 POWER DISSIPATION (W) 50 40 30 20 10 0 0 10 20 30 40 50 TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 2 3 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 7 10 –2 2 3 5 710 –1 2 3 5 710 0 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 130 CASE TEMPERATURE (°C) 120 110 100






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