DatasheetsPDF.com

RMPA0965

Fairchild Semiconductor
Part Number RMPA0965
Manufacturer Fairchild Semiconductor
Description CDMA and CDMA2000-1X PowerEdge Power Amplifier Module
Published Apr 16, 2005
Detailed Description RMPA0965 September 2004 RMPA0965 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module General Description The RMPA09...
Datasheet PDF File RMPA0965 PDF File

RMPA0965
RMPA0965

Overview
RMPA0965 September 2004 RMPA0965 CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module General Description The RMPA0965 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications.
The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
Features • Single positive-supply operation with low power and shutdown modes • 40% CDMA efficiency at +28 dBm average output power • 52% AMPS mode efficiency at +31 dBm output power • Compact LCC package ( 3.
0 x 3.
0 x 1.
0 mm) • Internally matched to 50Ω and DC blocked RF input/ output • Meets CDMA2000-1XRTT performance requirements Device Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Value 5.
0 2.
6 to 3.
5 3.
5 +10 -55 to +150 Units V V V dBm °C Note: 1: No permanent damage with only one parameter set at extreme limit.
Other parameters set to typical values.
Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 Vmode 3 DC BIAS CONTROL Vref 4 INPUT MATCH OUTPUT MATCH 8 Vcc2 7 RF OUT 6 GND 5 GND (paddle ground on package bottom) ©2004 Fairchild Semiconductor Corporation RMPA0965 Rev.
C RMPA0965 Electrical Characteristics1 Symbol Parameter f Operating Frequency CDMA Operation SSg Small-Signal Gain Gp Power Gain Po PAEd Linear Output Power Min 824 Typ Max 849 Units MHz dB dB dB dBm dBm % % % mA mA dBc dBc dBc dBc dB % 2.
5:1 dB dBm/Hz Po ≤ +28 dBm; 869 to 894 MHz dBc Po ≤ +28 dBm dBc Load VSWR ≤ 5.
0:1 No permanent damage.
°C mA mA µA Vmode ≥ 2.
0V Po ≤ +28 dBm No applied RF signal.
Comments 31 30 29 28 16 40 9 25 470 120 -50 -52 -60 -70 30 52 2.
0:1 4 -137 PAE (digital) @ +28 dBm PAE (digital) @ +16 dBm PAEd (digita...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)