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RN1222

Toshiba Semiconductor
Part Number RN1222
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1...
Datasheet PDF File RN1222 PDF File

RN1222
RN1222

Overview
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA) l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN2221~2227 Unit: mm Equivalent Circuit Type No.
RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 R1 (kΩ) 1 2.
2 4.
7 10 0.
47 1 2.
2 R2 (kΩ) 1 2.
2 4.
7 10 10 10 10 JEDEC EIAJ TOSHIBA Weight: 0.
13g ― ― 2-4E1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1221~1227 RN1221~1224 Emitter-base voltage RN1225, 1226 RN1227 Collector current Collector power dissipation Junction temperature Storage temperature range RN1221~1227 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 10 5 6 800 300 150 −55~150 mA mW °C °C V Unit V V 1 2001-06-07 RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1221~1227 RN1221 RN1222 RN1223 Emitter cut-off current RN1224 RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC current gain RN1224 RN1225 RN1226 RN1227 Collector-emitter saturation voltage RN1221 RN1222~1227 RN1221 RN1222 RN1223 Input voltage (ON) RN1224 RN1225 RN1226 RN1227 RN1221~1224 Input voltage (OFF) RM1225, 1226 RN1227 Translation frequency Collector output capacitance RN1221~1227 RN1221~1227 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 5V, IC = 20mA VCB = 10V, IE = 0, f = 1MHz VCE = 5V, IC = 0.
1mA VCE = 0.
2V, IC = 100mA IC = 50mA, IB = 2mA IC = 50mA, IB = 1mA VCE = 5V, IC = 100mA VEB = 5V, IC = 0 VEB = 6V, IC = 0 VEB = 10V, IC = 0 Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min ― ― 3.
85 1.
75 0.
82 0.
38 0.
365 0.
35 0.
378 60 65 70 90 90 90 90 ...


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