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RN1407

Toshiba Semiconductor
Part Number RN1407
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN1409 Switching, Invert...
Datasheet PDF File RN1407 PDF File

RN1407
RN1407


Overview
RN1407,RN1408,RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407,RN1408,RN1409 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2407~RN2409 Unit: mm Equivalent Circuit and Bias Resister Values Type No.
RN1407 RN1408 RN1409 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1407~RN1409 RN1407~RN1409 RN1407 Emitter-base voltage RN1408 RN1409 Collector current Collector power dissipation Junction temperature Storage temperature range RN1407~RN1409 RN1407~RN1409 RN1407~RN1409 RN1407~RN1409 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 200 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
012g TO-236MOD SC-59 2-3F1A Unit V V V mA mW °C °C 1 2001-06-07 RN1407,RN1408,RN1409 Electrical Characteristics (Ta = 25°C) Ch...



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