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RN2703JE

Toshiba Semiconductor
Part Number RN2703JE
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Apr 16, 2005
Detailed Description RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN270...
Datasheet PDF File RN2703JE PDF File

RN2703JE
RN2703JE

Overview
RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
· · Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
· Complementary to RN1701JE~RN1706JE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No.
RN2701JE RN2702JE R2 RN2703JE RN2704JE E RN2705JE RN2706JE R1 (kW) 4.
7 10 22 47 2.
2 4.
7 R2 (kW) 4.
7 10 22 47 47 47 B R1 JEDEC JEITA TOSHIBA Weight: g (typ.
) ― ― ― Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2701JE~...


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