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RN2908FE

Toshiba Semiconductor
Part Number RN2908FE
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Apr 16, 2005
Detailed Description RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN290...
Datasheet PDF File RN2908FE PDF File

RN2908FE
RN2908FE

Overview
RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
· · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
· Complementary to RN1907FE~RN1909FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No.
RN2907FE RN2908FE R2 RN2909FE E R1 (kW) 10 22 47 R2 (kW) 47 47 22 B R1 JEDEC JEITA TOSHIBA Weight: g (typ.
) ― ― ― Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Characteristics Collector-base voltage Collector-emitter voltage RN2907FE~ RN2909FE RN2907FE Emitter-base voltage RN2908FE RN2909FE Collector current Collector power dissipation RN2907FE~ RN2909FE Junction temperature Storage temperature range I...


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