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RN4982

Toshiba Semiconductor
Part Number RN4982
Manufacturer Toshiba Semiconductor
Description Silicon PNP/NPN Transistor
Published Apr 16, 2005
Detailed Description RN4982 Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4982 1. App...
Datasheet PDF File RN4982 PDF File

RN4982
RN4982


Overview
RN4982 Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4982 1.
Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2.
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Including two devices in US6 (ultra super mini type with 6 leads) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
3.
Equivalent Circuit 4.
Bias Resistor Values (Typ.
) Part No.
RN4982 5.
Packaging and Pin Assignment R1 (kΩ) 10 R2 (kΩ) 10 US6 ©2021-2023 1 Toshiba Electronic Devices & Storage Corporation 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 Start of commercial production 1992-10 2023-10-27 Rev.
3.
0 6.
Orderable part number RN4982 Orderable part number AEC-Q101 Note RN4982,LF � General Use RN4982,LXGF YES (Note 1) Unintended Use RN4982,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1) 7.
Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit 50 V 50 10 100 mA 8.
Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating Unit -50 V -50 -10 -100 mA 9.
Q1, Q2 Common Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Collector power dissipation Junction temperature (Note 1) PC Tj 200 mW 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may c...



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