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RF2416

RF Micro Devices
Part Number RF2416
Manufacturer RF Micro Devices
Description DUAL-BAND 2.7V LOW NOISE AMPLIFIER
Published Apr 16, 2005
Detailed Description Preliminary 4 Typical Applications • GSM/DCS Dual-Band Handsets • Cellular/PCS Dual-Band Handsets RF2416 DUAL-BAND 2.7V...
Datasheet PDF File RF2416 PDF File

RF2416
RF2416


Overview
Preliminary 4 Typical Applications • GSM/DCS Dual-Band Handsets • Cellular/PCS Dual-Band Handsets RF2416 DUAL-BAND 2.
7V LOW NOISE AMPLIFIER • General Purpose Amplification • Commercial and Consumer Systems Product Description The RF2416 is a dual-band low noise amplifier with bypass switch designed for use as a front-end for 950MHz GSM and DCS1800/PCS1900 applications.
It may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass switch; the 1800/1900 LNA is a two-stage amplifier with bypass switch.
Both amplifiers have excellent noise figure and high linearity in both high gain and bypass/low gain mode.
The device is packaged in a 3mmx3mm, 12 pin, leadless chip carrier.
0.
80 0.
65 1.
00 0.
85 0.
60 0.
24 typ 4 PLCS 2 0.
30 0.
18 1.
25 sq.
0.
95 12° max 0.
05 0.
01 0.
75 0.
50 0.
50 0.
23 0.
13 4 PLCS Dimensions in mm.
NOTES: 1 Shaded Pin is Lead 1.
2 Dimension applies to plated terminal and is measured between 0.
02 mm and 0.
25 mm from terminal end.
Pin 1 identifier must exist on top surface of package by identification mark or 3 feature on the package body.
Exact shape and size is optional.
4 Package Warpage: 0.
05 mm max.
5 Die thickness allowable: 0.
305 mm max.
Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: LCC, 12-Pin, 3x3 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Low Noise and High Intercept Point • Dual-Band Application GSM900 and DCS1800/PCS1900 • Power Down Control • Switchable Gain HB GND1 12 HB IN 1 11 10 9 HB OUT HB BIAS 2 Logic Control HB GND2 VCC1 HB 8 HB SELECT LB BIAS 3 4 LB IN 5 LB GND 6 LB OUT 7 LB SELECT Ordering Information RF2416 RF2416 PCBA Dual-Band 2.
7V Low Noise Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc.
7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.
rfmd.
com Rev A2 010810 4-199 GENERAL PURPOSE AMPLIFIERS 3.
00 sq.
4 0.
65 0.
30 RF2416 Absolute ...



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