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RFD7N10LESM

Intersil Corporation
Part Number RFD7N10LESM
Manufacturer Intersil Corporation
Description 7A/ 100V/ 0.300 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
Published Apr 16, 2005
Detailed Description RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MO...
Datasheet PDF File RFD7N10LESM PDF File

RFD7N10LESM
RFD7N10LESM

Overview
RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.
3 7A, 100V, 0.
300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49046.
Features • 7A, 100V • rDS(ON) = 0.
300Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 1...


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