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RFT1P06E

Intersil Corporation
Part Number RFT1P06E
Manufacturer Intersil Corporation
Description 1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description RFT1P06E Data Sheet August 1999 File Number 4495.1 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET These produc...
Datasheet PDF File RFT1P06E PDF File

RFT1P06E
RFT1P06E

Overview
RFT1P06E Data Sheet August 1999 File Number 4495.
1 1.
4A, 60V, 0.
285 Ohm, ESD Rated, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49044.
Features • 1.
4A, 60V • rDS(ON) = 0.
285Ω • 2kV ESD Protected • Temperature Compensating PSPICE® Model • SPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 150oC Operating Temperature • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFT1P06E PACKAGE SOT-223 BRAND R1P06E Symbol D NOTE: RFT1P06E is available only in tape and reel.
G S Packaging SOT-223 DRAIN (FLANGE) SOURCE DRAIN GATE 4-171 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999.
RFT1P06E Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified RFT1P06E -60 -60 ±20V 1.
4 Figure 5 Figures 6, 14, 15 1.
1 9.
09 -55 to 150 300 260 UNITS V V V A Drain to Source Voltage (Note 1) .
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VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Gate to Source Voltage .
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VGS Drain Current Continuous (Figure 2) (Note 2).
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