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RGBC40M

International Rectifier
Part Number RGBC40M
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)
Published Apr 16, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSIST...
Datasheet PDF File RGBC40M PDF File

RGBC40M
RGBC40M

Overview
Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.
1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.
0V @VGE = 15V, IC = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°...


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