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RHN7150

International Rectifier
Part Number RHN7150
Manufacturer International Rectifier
Description TRANSISTOR N-CHANNEL
Published Apr 16, 2005
Detailed Description Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.720A REPETITIVE AVALANCHE AND dv/dt RATED H...
Datasheet PDF File RHN7150 PDF File

RHN7150
RHN7150

Overview
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.
720A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7150 IRHN8150 N-CHANNEL MEGA RAD HARD 100 Volt, 0.
055Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si).
Under identical preand post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1.
No compensation in gate drive circuitry is required.
In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure.
Since the MEGA RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary Part Number IRHN7150 IRHN8150 BV DSS 100V 100V RDS(on) 0.
055Ω 0.
055Ω ID 34A 34A Features: s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Ident...


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