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RF2105L

RF Micro Devices
Part Number RF2105L
Manufacturer RF Micro Devices
Description HIGH POWER LINEAR UHF AMPLIFIER
Published Apr 16, 2005
Detailed Description 2 Typical Applications • 900 MHz ISM Band Applications • 400 MHz Industrial Radios • Digital Communication Systems RF21...
Datasheet PDF File RF2105L PDF File

RF2105L
RF2105L

Overview
2 Typical Applications • 900 MHz ISM Band Applications • 400 MHz Industrial Radios • Digital Communication Systems RF2105L HIGH POWER LINEAR UHF AMPLIFIER • Driver Stage for Higher Power Applications • Commercial and Consumer Systems • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product Description The RF2105L is a high power, high efficiency linear amplifier IC.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification.
It is packaged in a 16-lead ceramic package with a backside ground.
The device is self-contained with the exception of the output matching network and power supply feed line.
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242 0.
075 0.
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017 0.
025 0.
080 R0.
008 0.
050 0.
208 0.
192 sq.
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022 0.
018 0.
080 Optimum Technology Matching® Applied Si B...


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