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RA13H4047M-E01

Mitsubishi Electric Semiconductor
Part Number RA13H4047M-E01
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 4...
Datasheet PDF File RA13H4047M-E01 PDF File

RA13H4047M-E01
RA13H4047M-E01

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M BLOCK DIAGRAM 2 3 400-470MHz 13W 12.
5V, 2 Stage Amp.
For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.
5V (typical) and 5V (maximum).
At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.
5V, VGG=0V) • Pout>13W, ηT>40% @ VDD=12.
5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.
88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H2S ORDERING INFORMATION: ORDER NUMBER RA13H4047M-E01 RA13H4047M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA13H4047M MITSUBISHI ELECTRIC 1/9 24 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA13H4047M MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg...


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