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RA35H1516M-E01

Mitsubishi Electric Semiconductor
Part Number RA35H1516M-E01
Manufacturer Mitsubishi Electric Semiconductor
Description 154-162MHz 40W 12.5V MOBILE RADIO
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V...
Datasheet PDF File RA35H1516M-E01 PDF File

RA35H1516M-E01
RA35H1516M-E01


Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.
5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 154- to 162-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.
5V (typical) and 5V (maximum).
At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output ...



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