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RBV2501

EIC discrete Semiconductors
Part Number RBV2501
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Apr 16, 2005
Detailed Description RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge cu...
Datasheet PDF File RBV2501 PDF File

RBV2501
RBV2501

Overview
RBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.
9 ± 0.
2 C3 30 ± 0.
3 4.
9 ± 0.
2 ∅ 3.
2 ± 0.
1 20 ± 0.
3 + 13.
5 ± 0.
3 ~ ~ 11 ± 0.
2 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.
7 grams 1.
0 ± 0.
1 10 7.
5 7.
5 ±0.
2 ±0.
2 ±0.
2 2.
0 ± 0.
2 0.
7 ± 0.
1 Dimensions in millimeters Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTR...


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