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RBV5002

EIC discrete Semiconductors
Part Number RBV5002
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Apr 16, 2005
Detailed Description www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS PRV : 5...
Datasheet PDF File RBV5002 PDF File

RBV5002
RBV5002

Overview
www.
eicsemi.
com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 C3 30 ± 0.
3 3.
9 ± 0.
2 4.
9 ± 0.
2 Φ 3.
2 ± 0.
1 20 ± 0.
3 + ~~ 13.
5 ± 0.
3 1.
0 ± 0.
1 11 ± 0.
2 17.
5 ± 0.
5 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.
17 grams ( Approximaly ) 10 7.
5 7.
5 ±0.
2 ±0.
2±0.
2 2.
0 ± 0.
2 0.
7 ± 0.
1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM RBV 5000 50 VRMS 35 VDC 50 IF(AV) RBV 5001 100 70 100 RBV 5002 200 140 200 RBV 5004 400 280 400 50 RBV 5006 600 420 600 RBV 5008 800 560 800 RBV 5010 1000 700 1000 UNIT V V V A IFSM 400 A I2t VF IR IR(H) RθJC TJ TSTG 660 1.
1 10 200 1.
5 10 - 40 to + 150 A2S V μA μA °C/W °C °C Note : 1.
Thermal Resistance from junction to case with unit...


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