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RBV600

EIC discrete Semiconductors
Part Number RBV600
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Apr 16, 2005
Detailed Description www.eicsemi.com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High cu...
Datasheet PDF File RBV600 PDF File

RBV600
RBV600

Overview
www.
eicsemi.
com RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.
0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 3.
9 ± 0.
2 C3 30 ± 0.
3 4.
9 ± 0.
2 Ф 3.
2 ± 0.
1 20 ± 0.
3 + ~~ 13.
5 ± 0.
3 1.
0 ± 0.
1 11 ± 0.
2 17.
5 ± 0.
5 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.
80 grams ( Approximaly ) 10 7.
5 7.
5 ±0.
2 ±0.
2 ±0.
2 2.
0 ± 0.
2 0.
7 ± 0.
1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at IF = 3.
0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IF(AV) RBV 600 50 35 50 RBV 601 100 70 100 RBV 602 200 140 200 RBV RBV 604 605 400 500 280 350 400 500 6.
0 RBV 606 600 420 600 RBV 608 800 560 800 RBV 610 1000 700 1000 IFSM 200 I2t VF IR IR(H) RθJC TJ TSTG 64 1.
0 10 200 8.
0 - 40 to + 150 - 40 to + 150 Notes : 1.
Thermal Resistance from junction to case with units mounted on a 2.
6"x1.
4"x0.
06" THK (6.
5cm.
x3.
5cm.
x0.
15cm.
) Al.
Plate.
...


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