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RBV801D

EIC discrete Semiconductors
Part Number RBV801D
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Apr 16, 2005
Detailed Description www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV800D - RBV810D SILICON BRIDGE RECTIFIERS PRV : 5...
Datasheet PDF File RBV801D PDF File

RBV801D
RBV801D

Overview
www.
eicsemi.
com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV800D - RBV810D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.
0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.
97 grams ( Approximaly ) RBV25 3.
9 ± 0.
2 C3 30 ± 0.
3 4.
9 ± 0.
2 Φ 3.
2 ± 0.
1 20 ± 0.
3 + ~~ 11 ± 0.
2 17.
5 ± 0.
5 13.
5 ± 0.
3 1.
0 ± 0.
1 10 7.
5 7.
5 ±0.
2 ±0.
2 ±0.
2 2.
0 ± 0.
2 0.
7 ± 0.
1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.
3 ms.
Maximum Forward Voltage per Diode at IF = 8.
0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Typical Thermal Resistance at Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL RBV 800D VRRM 50 VRMS 35 VDC 50 IF(AV) RBV 801D 100 70 100 RBV 802D 200 140 200 RBV 804D 400 280 400 8.
0 RBV 806D 600 420 600 RBV 808D 800 560 800 RBV 810D 1000 700 1000 UNIT V V V A IFSM 300 A I2t VF IR IR(H) RθJC RθJA TJ TSTG 166 1.
0 10 200 2.
2 15 - 40 to + 150 - 40 to + 150 A2S V μA...


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