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RD30HUF1

Part Number	RD30HUF1
Manufacturer	Mitsubishi Electric Semiconductor
Description	Silicon MOSFET
Published	Apr 16, 2005
Detailed Description	MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 DRAWING 22.0+/-0.3 18....
Datasheet	RD30HUF1 PDF File

Overview

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 DRAWING 22.
0+/-0.
3 18.
0+/-0.
3 7.
6+/-0.
3 4-C1 Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
7.
2+/-0.
5 OUTLINE •High power gain: Pout>30W, Gp>10dB @Vdd=12.
5V,f=520MHz •High Efficiency: 55%typ.
2 3 R1.
6 14.
0+/-0.
4 6.
6+/-0.
3 FEATURES 1 3.
0+/-0.
4 5.
1+/-0.
5 For output stage of high power amplifiers in UHF band mobile radio sets.
2.
3+/-0.
3 APPLICATION 2.
8+/-0.
3 0.
10 PIN 1.
Drain 2.
Source 3.
Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS P...

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RD30HUF1 Silicon MOSFET - Mitsubishi Electric Semiconductor

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