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QED122

Fairchild Semiconductor
Part Number QED122
Manufacturer Fairchild Semiconductor
Description PLASTIC INFRARED LIGHT EMITTING DIODE
Published Apr 16, 2005
Detailed Description QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES • D= 880 nm REFERENCE SUR...
Datasheet PDF File QED122 PDF File

QED122
QED122

Overview
QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.
195 (4.
95) FEATURES • D= 880 nm REFERENCE SURFACE 0.
305 (7.
75) • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 0.
040 (1.
02) NOM 0.
800 (20.
3) MIN • Narrow Emission Angle, 18° • High Output Power • Package material and color: Clear, peach tinted, plastic 0.
050 (1.
25) CATHODE 0.
100 (2.
54) NOM 0.
240 (6.
10) 0.
215 (5.
45) 0.
020 (0.
51) SQ.
(2X) NOTES: 1.
Derate power dissipation linearly 2.
67 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Soldering iron 1/16” (1.
6mm) minimum from housing.
SCHEMATIC ANODE 1.
Dimensions for all drawings are in inches (mm).
2.
Tolerance of ± .
010 (.
25) on all non-nominal dimensions unless otherwise specified.
CATHODE ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD (TA =25°C) MIN TYP MAX UNITS Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 100 5 200 Unit °C °C °C °C mA V mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED121 Radiant Intensity QED122 Radiant Intensity QED123 Rise Time Fall Time IF = 20 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA DPE 0 VF IR IE IE IE tr tf 1 OF 3 — — — — 16 32 50 — — 880 ±9 — — — — — 800 800 — — 1.
7 10 40 100 — — — nm Deg.
V µA mW/sr mW/sr mW/sr ns ns www.
fairchildsemi.
com  2001 Fairchild Semiconductor Corporation DS300336 4/19/01 QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE TYPICAL PERFORMANCE CURVES NORMALIZED COLLECTOR CUR...


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