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PBSS4540Z

NXP

NPN medium power transistor

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specifi...



PBSS4540Z

NXP


Octopart Stock #: O-35538

Findchips Stock #: 35538-F

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Description
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor FEATURES High current (max. 10 A) Low voltage (max. 40 V) Low VCEsat. APPLICATIONS Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers VCEsat critical applications such as the latest low supply voltage IC applications All battery driven equipment to save battery power. handbook, halfpage PBSS4540Z PINNING PIN 1 2 3 4 base collector emitter collector DESCRIPTION 4 2, 4 1 DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. MARKING CODE TYPE NUMBER PBSS4540Z MARKING CODE PB4540 Fig.1 Simplified outline (SOT223) and symbol. 3 1 Top view 2 3 MAM287 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; no...




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