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QM200DY-24

Mitsubishi Electric Semiconductor
Part Number QM200DY-24
Manufacturer Mitsubishi Electric Semiconductor
Description HIGH POWER SWITCHING USE INSULATED TYPE
Published Apr 16, 2005
Detailed Description MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-24 • • • • • IC Collector c...
Datasheet PDF File QM200DY-24 PDF File

QM200DY-24
QM200DY-24

Overview
MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-24 • • • • • IC Collector current .
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200A VCEX Collector-emitter voltage .
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1200V hFE DC current gain.
75 Insulated Type UL Recognized Yellow Card No.
E80276 (N) File No.
E80271 APPLICATION Inverters, Servo dvives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 113 25 25 21.
5 B2X B2 E2 6 15 6 6 15 6 14 B2 B1 E1 E2 70 C2E1 E2 C1 5.
5 8 C2E1 B1X E2 E1 B1 4–φ6.
5 93 Tab#110, t=0.
5 3–M6 17 8 17 8 17 6.
5 31 LABEL 7 21 90 B2X B1X C1 Feb.
1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 200 200 1560 10 2000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.
96~2.
94 20~30 1.
96~2.
94 20~30 870 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse volt...


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