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QM50DY-HB

Mitsubishi Electric Semiconductor
Part Number QM50DY-HB
Manufacturer Mitsubishi Electric Semiconductor
Description Transistor
Published Apr 16, 2005
Detailed Description MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB • • • • • IC Collector c...
Datasheet PDF File QM50DY-HB PDF File

QM50DY-HB
QM50DY-HB


Overview
MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB • • • • • IC Collector current .
50A VCEX Collector-emitter voltage .
600V hFE DC current gain.
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.
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750 Insulated Type UL Recognized Yellow Card No.
E80276 (N) File No.
E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 80 20 20 20 E2 B2 3–M5 B2 E2 C1 C2E 1 E2 34 13 B1 E1 18 C2E1 2– φ6.
5 20 4 16 4 20 E2 C1 7 Tab#110, t=0.
5 4 4 E1 B1 31 LABEL (8) 22.
5 6.
5 Feb.
1999 MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.
47~1.
96 15~20 1.
96~2.
94 20~30 210 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25°C, unl...



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