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QSB320F

Fairchild Semiconductor
Part Number QSB320F
Manufacturer Fairchild Semiconductor
Description SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR
Published Apr 16, 2005
Detailed Description QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1...
Datasheet PDF File QSB320F PDF File

QSB320F
QSB320F

Overview
QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.
118 (3.
0) 0.
102 (2.
6) 0.
091 (2.
3) 0.
083 (2.
1) 0.
083 (2.
1) 0.
067 (1.
7) 0.
041 (0.
1) 0.
035 (0.
9) 0.
028 (0.
7) 0.
134 (3.
4) 0.
118 (3.
0) 0.
094 (2.
4) FEATURES 0.
043 (1.
1) 0.
020 (0.
5) COLLECTOR 0.
024 (0.
6) 0.
016 (0.
4) SCHEMATIC COLLECTOR • Surface Mount PLCC-2 Package • Wide Reception Angle, 120° 0.
007 (.
18) 0.
005 (.
12) • High Sensitivity • Phototransistor Output • Matched Emitter: QEB421 EMITTER NOTES: 1.
Dimensions for all drawings are in inches (millimeters).
2.
Tolerance of ± .
010 (.
25) on all non nominal dimensions unless otherwise specified.
• Daylight Filter NOTES ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Collector Current Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-F VCE VEC IC PD Rating -55 to +100 -55 to +100 260 for 10 sec 35 5 15 165 Unit °C °C °C V V mA mW 1.
Derate power dissipation linearly 2.
2 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
D = 940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength Wavelength Sensitivity Range Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time VCE = 25 V, Ee = 0 IC = 1 mA IE = 100 µA Ee = 0.
1 mW/cm2(4), VCE = 5 V Ee = 0.
5 mW/cm2(4), IC = 0.
05 mA VCC = 5 V, RL = 100 1 IC = 1 mA DPS DSR 0 ID BVCEO BVECO IC (ON) VCE (SAT) tr tf — 700 — — 30 5 16 — — — 880 — 120 — — — — — 8 8 — 1000 — 200 — — — 0.
3 — — nm nm Deg.
nA V V µA V µs µs  2001 Fairchild Semiconductor Corporation DS300387 2/26/01 1 OF 3 www.
fairchildsemi.
com QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR Fig.
1 Dark Current Vs.
Ambient Temperatur...


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