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QSE133

Fairchild Semiconductor
Part Number QSE133
Manufacturer Fairchild Semiconductor
Description PLASTIC SILICON INFRARED PHOTOTRANSISTOR
Published Apr 16, 2005
Detailed Description PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE133 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) Ø 0.065 (1.65) 0.050 (1.27...
Datasheet PDF File QSE133 PDF File

QSE133
QSE133

Overview
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE133 PACKAGE DIMENSIONS 0.
175 (4.
44) 0.
087 (2.
22) Ø 0.
065 (1.
65) 0.
050 (1.
27) 0.
200 (5.
08) Ø 0.
095 (2.
41) 0.
500 (12.
70) MIN EMITTER COLLECTOR 0.
020 (0.
51) SQ.
(2X) SCHEMATIC COLLECTOR 0.
100 (2.
54) 0.
030 (0.
76) 0.
100 (2.
54) NOM NOTES: 1.
Dimensions for all drawings are in inches (mm).
2.
Tolerance of ± .
010 (.
25) on all non-nominal dimensions unless otherwise specified.
EMITTER DESCRIPTION The QSE133 is a silicon photodarlington encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES • • • • • • • NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50° Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity © 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE133 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) NOTES: 1.
Derate power dissipation linearly 1.
33 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or isopropyl alcohols are recommended as cleaning agents.
4.
Soldering iron 1/16" (1.
6 mm) minimum from housing.
5.
λ = 880 nm (AlGaAs).
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current(5) VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 µA Ee = 0.
25 mW/cm2, VCE =5V Test Conditions Symbol λPS Θ ICEO BVCEO BVECO IC(ON) VCE(SAT) tr tf Min — — — 30 5 9.
0 — — — Typ 880 ±25 — — — — — 20 50 Max — — 100 — — — 1.
0 — — Units nM Deg.
nA V V mA...


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