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PTF210451

Part Number	PTF210451
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
Published	Apr 16, 2005
Detailed Description	PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally mat...
Datasheet	PTF210451 PDF File

Overview

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Internal matching for wideband performance Typical two–carrier WCDMA performance - Average output power = 11.
5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output p...

Similar Datasheet

PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz - Infineon Technologies AG
PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz - Infineon Technologies AG

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