DatasheetsPDF.com

PTF211301A

Infineon Technologies AG
Part Number PTF211301A
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
Published Apr 16, 2005
Detailed Description PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally ...
Datasheet PDF File PTF211301A PDF File

PTF211301A
PTF211301A

Overview
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications.
It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.
5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Bo...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)