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PUMB11

NXP
Part Number PUMB11
Manufacturer NXP
Description PNP/PNP resistor-equipped transistors
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB11 PNP resistor-equipped double transistor Product speci...
Datasheet PDF File PUMB11 PDF File

PUMB11
PUMB11

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB11 PNP resistor-equipped double transistor Product specification 2000 Aug 08 Philips Semiconductors Product specification PNP resistor-equipped double transistor FEATURES • Transistors with built-in bias resistors R1 and R2 (typ.
10 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package.
MARKING TYPE NUMBER PUMB11 PINNING PIN 1 and 4 2 and 5 6 and 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE Bt1 2, 5 1, 4 MBK120 PUMB11 handbook, halfpage 6 5 4 R1 TR1 R2 5 4 6 R2 TR2 R1 1 Top view 2 3 MAM426 1 2 3 Fig.
1 Simplified outline (SC-88) and symbol.
6, 3 Fig.
2 Equivalent inverter symbol.
2000 Aug 08 2 Philips Semiconductors Product specification PNP resistor-equipped double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Refer to SC-88 standard mounting conditions.
total power dissipation Tamb ≤ 25 °C; note 1 − output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 open emitter open base open collector − − − PARAMETER CONDITIONS MIN.
PUMB11 MAX.
−50 −50 −10 +10 −40 −100 −100 200 +150 150 +150 UNIT V V V V V mA mA mW °C °C °C mW 300 2000 Aug 08 3 Philips Semiconductors Product specification PNP resistor-equipped double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note...


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