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PUMH1

NXP
Part Number PUMH1
Manufacturer NXP
Description NPN resistor-equipped double transistor
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMH1 NPN resistor-equipped double transistor Product spec...
Datasheet PDF File PUMH1 PDF File

PUMH1
PUMH1

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMH1 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 06 1999 May 20 Philips Semiconductors Product specification NPN resistor-equipped double transistor FEATURES • Transistors with built-in bias resistors R1 and R2 (typ.
22 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space.
TR1 andbook, halfpage PUMH1 6 5 4 R1 5 4 6 R2 TR2 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
1 Top view 2 3 MAM342 R2 R1 1 2 3 Fig.
1 Simplified outline (SC-88) and symbol.
DESCRIPTION NPN resistor-equipped double transistor in an SC-88 (SOT363) plastic package.
PINNING PIN 1, 4 2, 5 6, 3 MARKING TYPE NUMBER PUMH1 MARKING CODE Ht2 Fig.
2 Equivalent inverter symbol.
emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 2 MGA893 - 1 1 3 1999 May 20 2 Philips Semiconductors Product specification NPN resistor-equipped double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416 total power dissipation Tamb ≤ 25 °C − 300 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +40 −10 100 100 200 +150 150 +150 open emitter open base open collector − − − 50 50 10 PARAMETER CONDITIONS MIN.
PUMH1 MAX.
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