DatasheetsPDF.com

Q62702-A0062

Siemens Semiconductor Group
Part Number Q62702-A0062
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
Published Apr 16, 2005
Detailed Description Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-...
Datasheet PDF File Q62702-A0062 PDF File

Q62702-A0062
Q62702-A0062

Overview
Silicon Schottky Diode Preliminary Data DBS mixer application to 10 GHz Low noise figure q Low barrier type q q BAT 15-098 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-098 Marking white B Ordering Code Pin Configuration (tape and reel) Q62702-A0062 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 80 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF Ptot Tstg Top Values 4 110 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C 770 690 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group 1 07.
94 BAT 15-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min.
V(BR) VF – – ∆VF CT RF – – – 0.
23 0.
32 – – 5.
5 – – 20 0.
35 – mV pF Ω 4 Values typ.
– max.
– V Unit Semiconductor Group 2 BAT 15-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GHz 1 2 3 4 5 6 7 8 9 10 I = 0.
02 mA MAG ANG 0.
96 0.
95 0.
94 0.
91 0.
88 0.
87 0.
86 0.
89 0.
91 0.
93 – 22.
19 – 44.
30 – 68.
60 – 96.
40 – 127.
50 – 165.
30 – 150.
50 109.
60 75.
20 45.
10 I = 0.
05 mA MAG ANG 0.
83 0.
82 0.
80 0.
76 0.
74 0.
72 0.
72 0.
78 0.
84 0.
88 – 24.
20 – 46.
30 – 71.
30 – 100.
00 – 133.
50 – 174.
30 141.
50 101.
70 68.
89 41.
10 I = 0.
1 mA MAG ANG 0.
71 0.
68 0.
65 0.
61 0.
57 0.
55 0.
60 0.
68 0.
77 0.
83 – 24.
59 – 46.
70 – 72.
30 – 101.
50 – 138.
50 – 151.
30 133.
70 94.
70 63.
90 38.
40 I = 0.
2 mA MAG ANG 0.
71 0.
68 0.
65 0.
6...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)