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Q62702-A1145

Part Number	Q62702-A1145
Manufacturer	Siemens Semiconductor Group
Description	Preliminary data Silicon RF Switching Diode
Published	Apr 16, 2005
Detailed Description	BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation...
Datasheet	Q62702-A1145 PDF File

Overview

BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 .
.
.
+ 125 - 55 .
.
.
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 0.
93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.
6 0.
57 0.
7 0.
15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf - Ω nH IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls Semiconductor Group 2 Feb-26-1996 BAR 81 Configuration of the shunt-diode - A per...

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