DatasheetsPDF.com

Q62702-A730

Siemens Semiconductor Group
Part Number Q62702-A730
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
Published Apr 16, 2005
Detailed Description Silicon Schottky Diodes General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-l...
Datasheet PDF File Q62702-A730 PDF File

Q62702-A730
Q62702-A730


Overview
Silicon Schottky Diodes General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q BAS 70 … ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70 BAS 70-04 Marking 73s 74s Ordering Code Pin Configuration (tape and reel) Q62702-A118 Q62702-A730 Package1) SOT-23 BAS 70-05 75s Q62702-A711 BAS 70-06 76s Q62702-A774 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 01.
97 BAS 70 … General-purpose diodes for high-speed switching q Circuit protection q Voltage clamping q High-level detecting and mixing Available with CECC quality assessment q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-07 Marking 77s Ordering Code Pin Configuration (tape and reel) Q62702-A846 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS 70-04 … Rth JA ≤ ≤ ≤ ≤ Symbol VR IF IFSM Ptot Values 70 70 100 250 Unit V mA mW Tj Top Tstg 150 – 55 … + 150 – 55 … + 150 ˚C K/W 405 575 335 435 Rth JS 1) 2) 3) For detailed information see chapter Package Outlines.
Max.
450 mW per package.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BAS 70 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Breakdown voltage IR = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Diode capacitance VR = 0, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz V(BR) IR – – VF – – – CT τ rf – – – 375 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)