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Q62702-A826


Part Number Q62702-A826
Manufacturer Siemens Semiconductor Group
Title Silicon Schottky Diode
Description Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-test...
Features rd current IF = f (VF) ...

File Size 31.49KB
Datasheet Q62702-A826 PDF File








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Q62702-A829 : Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q62702-A829 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operation temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 35 100 – 55 + 150 Unit V mA – 55 + 125 ˚C 600 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BA 582 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V Diode capacitance f = 1 M.




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