DatasheetsPDF.com

Q62702-A826

Siemens Semiconductor Group
Part Number Q62702-A826
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode
Published Apr 16, 2005
Detailed Description Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies u...
Datasheet PDF File Q62702-A826 PDF File

Q62702-A826
Q62702-A826

Overview
Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) Marking Ordering Code (tape and reel) 32 Q62702-A826 Pin Configuration Package1) Cerec-X BAT 32 … 18 (X, Ku) Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 6.
5 50 150 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see chapter Package Outlines.
BAT 32 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Breakdown voltage IR = 1 mA Forward voltage IF = 1 mA IF = 10 mA Diode capacitance VR = 0.
15 V, f = 1 MHz Differential resistance VF = 0, f = 10 kHz Symbol min.
V(BR) VF – – CT Ro – – 0.
2 0.
6 0.
20 15 – – 0.
24 – pF kΩ 6.
5 Values typ.
– max.
– V Unit Forward current IF = f (VF) ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)