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Q62702-B631

Siemens Semiconductor Group
Part Number Q62702-B631
Manufacturer Siemens Semiconductor Group
Description Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
Published Apr 16, 2005
Detailed Description BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VC...
Datasheet PDF File Q62702-B631 PDF File

Q62702-B631
Q62702-B631

Overview
BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 51 Marking Ordering Code S3 Q62702-B631 Pin Configuration 1=A 2=A Package 3 = C1/C2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 .
.
.
+ 150 - 55 .
.
.
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jan-09-1997 BBY 51 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC Characteristics Diode capacitance CT 4.
5 3.
4 2.
7 2.
5 5.
3 4.
2 3.
5 3.
1 1.
75 1.
78 0.
5 0.
37 0.
12 2 6.
1 5.
2 4.
6 3.
7 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.
55 2.
2 pF 1.
4 2.
2 0.
7 Ω pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Capa...


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