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Q62702-C1507

Part Number	Q62702-C1507
Manufacturer	Siemens Semiconductor Group
Description	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Published	Apr 16, 2005
Detailed Description	PNP Silicon AF Transistors BC 856 ... BC 860 Features q q q q q For AF input stages and driver applications High curr...
Datasheet	Q62702-C1507 PDF File

Overview

PNP Silicon AF Transistors BC 856 .
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BC 860 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889 Pin Configuration 1 2 3 B E C Package1) SOT-23 1)For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.
96 BC 856 .
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.
BC 860 Maximum Ratings Parameter Symbol BC 856 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BC 857 BC 860 45 50 50 5 100 200 200 200 330 150 Unit BC 858 BC 859 30 30 30 5 mA V VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg 65 80 80 5 mW ˚C – 65 … + 150 310 240 K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BC 856 .
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BC 860 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-base breakdown voltage IC = 10 µA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 856 BC 857, BC 860 BC 858, BC 859 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C DC current gain IC = 10 µA, VCE = 5 V BC ...

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