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Q62702-C2107

Part Number	Q62702-C2107
Manufacturer	Siemens Semiconductor Group
Description	PNP Silicon AF Transistors (For AF driver and output stages High collector current)
Published	Apr 16, 2005
Detailed Description	PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages q High collector current q Low collector-...
Datasheet	Q62702-C2107 PDF File

Overview

PNP Silicon AF Transistors BCP 51 .
.
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BCP 53 For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCP 54 … BCP 56 (NPN) q Type BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Marking BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Ordering Code (tape and reel) Q62702-C2107 Q62702-C2109 Q62702-C2110 Q62702-C2146 Q62702-C2112 Q62702-C2113 Q62702-C2147 Q62702-C2115 Q62702-C2116 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 5.
91 BCP 51 .
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BCP 53 Maximum Ratings Parameter Collector-emitter voltage RBE ≤ 1 kΩ Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C1) Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.
5 100 200 1.
5 150 BCP 53 80 100 100 Unit V A mA W ˚C – 65 … + 150 72 17 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BCP 51 .
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BCP 53 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 51 BCP 52 BCP 53 Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 51 BCP 52 BCP 53 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 51/BCP 52/BCP 53 BCP 51/BCP 52/BCP 53-10 BCP 51/BCP 52/BCP 53-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter volta...

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