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Q62702-C2304

Part Number	Q62702-C2304
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Published	Apr 16, 2005
Detailed Description	NPN Silicon AF Transistor BC 846 W ... BC 850 W Features q q q q q For AF input stages and driver applications High c...
Datasheet	Q62702-C2304 PDF File

Overview

NPN Silicon AF Transistor BC 846 W .
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BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW BC 848 CW BC 849 BW BC 849 CW BC 850 BW BC 850 CW Marking 1 As 1 Bs 1 Es 1 Fs 1 Gs 1 Js 1 Ks 1 Ls 2 Bs 2 Cs 2 Fs 2 Gs Ordering code (tape and reel) Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 Q62702-C2312 Q62702-C2313 Pin Configuration 1 2 3 B E C Package SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 Semiconductor Group 1 04.
96 BC 846W .
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BC 850W Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/1 cm2 Cu.
Semiconductor Group 2 BC 846W .
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BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified.
Description Symbol min.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)CBO Collector-base breakdown voltage1) IC = 100 µA BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)CBO Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)EBO Emitter-base breakdown voltage IE = 10 µA BC 846 W, BC 847 W BC 848 W, BC ...

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