DatasheetsPDF.com

Q62702-C2308 Datasheet PDF


Part Number Q62702-C2308
Manufacturer Siemens Semiconductor Group
Title NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total pow...
Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW B...

File Size 272.32KB
Datasheet Q62702-C2308 PDF File








Similar Ai Datasheet

Q62702-C230 : .

Q62702-C230-P : .

Q62702-C230-S2 : .

Q62702-C2300 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC 856W BC 857W BC 858W Unit BC 860W BC 859W 65 80 80 5 45 50 50 5 100 200 250 150 –65 to 150 30 30 30 5 V V V V mA mA mW ˚C ˚C 240 105 K/W K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1.

Q62702-C2301 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC 856W BC 857W BC 858W Unit BC 860W BC 859W 65 80 80 5 45 50 50 5 100 200 250 150 –65 to 150 30 30 30 5 V V V V mA mA mW ˚C ˚C 240 105 K/W K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1.

Q62702-C2302 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC 856W BC 857W BC 858W Unit BC 860W BC 859W 65 80 80 5 45 50 50 5 100 200 250 150 –65 to 150 30 30 30 5 V V V V mA mA mW ˚C ˚C 240 105 K/W K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1.

Q62702-C2303 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC 856W BC 857W BC 858W Unit BC 860W BC 859W 65 80 80 5 45 50 50 5 100 200 250 150 –65 to 150 30 30 30 5 V V V V mA mA mW ˚C ˚C 240 105 K/W K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1.

Q62702-C2304 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol min. D.

Q62702-C2305 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol min. D.

Q62702-C2306 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol min. D.

Q62702-C2307 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol min. D.

Q62702-C2309 : Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 –65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240 105 K/W K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol min. D.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)