DatasheetsPDF.com

Q62702-C623

Part Number	Q62702-C623
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
Published	Apr 16, 2005
Detailed Description	NPN Silicon AF Transistors BCX 58 BCX 59 High current gain q Low collector-emitter saturation voltage q Complementary ...
Datasheet	Q62702-C623 PDF File

Overview

NPN Silicon AF Transistors BCX 58 BCX 59 High current gain q Low collector-emitter saturation voltage q Complementary types: BCX 78, BCX 79 (PNP) q 2 3 1 Type BCX 58 VIII BCX 58 IX BCX 58 X BCX 59 VIII BCX 59 IX BCX 59 X Marking – Ordering Code Q62702-C619 Q62702-C620 Q62702-C621 Q62702-C623 Q62702-C624 Q62702-C625 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) 1) 2) Symbol BCX 58 VCE0 VCB0 VEB0 IC ICM IBM Tj Tstg 32 32 Values BCX 59 45 45 7 100 200 200 500 150 – 65 … + 150 Unit V mA Total power dissipation, TC = 70 ˚C Ptot mW ˚C Rth JA Rth JC ≤ ≤ 250 160 K/W For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.
5 mm.
Semiconductor Group 1 5.
91 BCX 58 BCX 59 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 2 mA BCX 58 BCX 59 Collector-base breakdown voltage IC = 10 µA BCX 58 BCX 59 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCX 58 BCX 59 BCX 58 BCX 59 ICEX – – IEB0 hFE BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X 20 20 40 100 120 180 250 380 40 45 60 60 78 145 220 300 170 250 350 500 – – – – – – – – 220 310 460 630 – – – – – – – – 20 20 20 nA – V(BR)CE0 32 45 V(BR)CB0 32 45 V(BR)EB0 ICB0 – – – – – – – – 20 20 10 10 nA nA µA µA µA Values typ.
max.
Unit V – – – – – – – – – – 7 Collector cutoff current VCE = 32 V, VBE = 0.
2 V,TA = 100 ˚C VCE = 45 V, VBE = 0.
2 V,TA = 100 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 10 µA, VCE = 5 V BCX 58 VII, BCX 58 VIII, BCX 58 ...

Similar Datasheet

Q62702-C619 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C620 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C621 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C623 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C624 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C625 NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C626 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C627 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C628 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group
Q62702-C629 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)